An IGSVL and SGSVL FinFET 6T SRAM-based novel power reduction technique
Keywords:
Fin FET, Shorted Gate, Power Reduction Technique, 6T SRAMAbstract
The development of future portable integrated circuits will need to focus on power optimization. As the consequence of continuous current flow, the rise in leakage current in VLSI circuits has recently emerged as a significant issue to solve. It is feasible to reduce the threshold voltage while still decreasing leakage, as long as you don't compromise the other design objectives. An integrated circuit's ability to operate at low power will be more essential in the future. Using current scaling technologies, it seems that Fin FET may potentially be a more practical choice for bulk CMOS. Fin FETs are said to be better than ordinary CMOS transistors since they are double gated. For minimizing power usage, you should use twin gates that are driven simultaneously or independently. In this research, T-Spice is used to install Fin FETs in 45nm SRAM cells that were produced using SRAM cells made in various process technologies to reduce leakage in the circuits under discussion.
Downloads
Downloads
Published
Issue
Section
License
License Terms for MJARET
Creative Commons Attributio 4.0 International (CC BY) License:
This license allows for the following:
-
Sharing — Copy and redistribute the material in any medium or format.
-
Adaptation — Remix, transform, and build upon the material.
The license is subject to the following terms:
-
Attribution:
- You must give appropriate credit, provide a link to the license, and indicate if changes were made.
- Attribution should include the citation of the article, the author's name, and a link to the original work published in MJARET.
- This must be done in any reasonable manner, but not in any way that suggests the licensor endorses you or your use.
-
NonCommercial:
- The material cannot be used for commercial purposes.
- Any use of the work intended to provide a commercial advantage or monetary compensation is considered outside the scope of this license.
-
No Additional Restrictions:
- You may not apply legal terms or technological measures that legally restrict others from doing anything the license permits.
General Provisions:
- Understandability: This license can be revoked if you do not comply with its terms and conditions.
- Public Domain: Where the work or any of its elements is in the public domain under applicable law, that status is in no way affected by the license.
- Other Rights:
- The license does not cover rights such as publicity, privacy, or moral rights that may affect your ability to use the material as contemplated by the license.
- Such rights might need to be considered and respected separately.
Disclaimer:
- MJARET does not provide any warranties with the work. The work is provided "as is" without any representations or warranties, express or implied. MJARET will not be liable for any damages resulting from the use of the work.
How to Cite:
- Proper attribution for use of the licensed work should follow the standard citation format provided by MJARET, which should include the author(s), the title of the work, MJARET, and the DOI link.
