SRAM CELL 6T AND 8T PARAMETRIC STABILITY ANALYSIS
Keywords:
SRAM, write margin, Cell Ratio, Pull up Ratio, SNMAbstract
As technology advances, the need for SRAM cells that may be utilised in high-speed applications grows. SRAM cells' static noise margin (SNM) is one of the most important variables to consider when designing a memory cell, and it is the main predictor of SRAM cell speed. The static noise margin will have an impact on the read and write margins. When it comes to the SRAM Cell's stability, the SNM is very important. For high-speed SRAMs, read/write margin analysis is critical since it affects how much data can be read and written. The simulation was run using Mentor Graphics' IC Station, which utilised 350nm technology rather than 180nm technology.
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